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Hydrogen-induced nanotunnel opening within semiconductor subsurface

Author

Listed:
  • Patrick Soukiassian

    (Istituto Materiali per Elettronica e Magnetismo—CNR
    Commissariat à l’Energie Atomique et aux Energies Alternatives
    Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin)

  • Erich Wimmer

    (Materials Design, Inc.
    Materials Design, SARL)

  • Edvige Celasco

    (Dipartimento di Fisica dell’Università di Genova)

  • Claudia Giallombardo

    (Dipartimento di Fisica dell’Università di Genova)

  • Simon Bonanni

    (Dipartimento di Fisica dell’Università di Genova
    Present address: SwissLitho AG, Technoparkstrasse 1, 8005 Zurich, Switzerland)

  • Luca Vattuone

    (Istituto Materiali per Elettronica e Magnetismo—CNR
    Dipartimento di Fisica dell’Università di Genova)

  • Letizia Savio

    (Istituto Materiali per Elettronica e Magnetismo—CNR)

  • Antonio Tejeda

    (Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin
    Institut Jean Lamour, CNRS-Université de Lorraine)

  • Mathieu Silly

    (Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin)

  • Marie D’angelo

    (Institut des NanoSciences de Paris, CNRS UMR 7588, Université Pierre et Marie Curie)

  • Fausto Sirotti

    (Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin)

  • Mario Rocca

    (Istituto Materiali per Elettronica e Magnetismo—CNR
    Dipartimento di Fisica dell’Università di Genova)

Abstract

One of the key steps in nanotechnology is our ability to engineer and fabricate low-dimensional nano-objects, such as quantum dots, nanowires, two-dimensional atomic layers or three-dimensional nano-porous systems. Here we report evidence of nanotunnel opening within the subsurface region of a wide band-gap semiconductor, silicon carbide. Such an effect is induced by selective hydrogen/deuterium interaction at the surface, which possesses intrinsic compressive stress. This finding is established with a combination of ab-initio computations, vibrational spectroscopy and synchrotron-radiation-based photoemission. Hydrogen/deuterium-induced puckering of the subsurface Si atoms marks the critical step in this nanotunnel opening. Depending on hydrogen/deuterium coverages, the nanotunnels are either metallic or semiconducting. Dangling bonds generated inside the nanotunnel offer a promising template to capture atoms or molecules. These features open nano-tailoring capabilities towards advanced applications in electronics, chemistry, storage, sensors or biotechnology. Understanding and controlling such a mechanism open routes towards surface/interface functionalization.

Suggested Citation

  • Patrick Soukiassian & Erich Wimmer & Edvige Celasco & Claudia Giallombardo & Simon Bonanni & Luca Vattuone & Letizia Savio & Antonio Tejeda & Mathieu Silly & Marie D’angelo & Fausto Sirotti & Mario Ro, 2013. "Hydrogen-induced nanotunnel opening within semiconductor subsurface," Nature Communications, Nature, vol. 4(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3800
    DOI: 10.1038/ncomms3800
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