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A strained organic field-effect transistor with a gate-tunable superconducting channel

Author

Listed:
  • Hiroshi M. Yamamoto

    (Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science
    RIKEN
    JST, PRESTO (Precursory Research for Embryonic Science and Technology))

  • Masaki Nakano

    (Institute for Materials Research, Tohoku University
    RIKEN Center for Emergent Matter Science (CEMS))

  • Masayuki Suda

    (Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science
    RIKEN)

  • Yoshihiro Iwasa

    (RIKEN Center for Emergent Matter Science (CEMS)
    School of Engineering, The University of Tokyo)

  • Masashi Kawasaki

    (RIKEN Center for Emergent Matter Science (CEMS)
    School of Engineering, The University of Tokyo)

  • Reizo Kato

    (RIKEN)

Abstract

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.

Suggested Citation

  • Hiroshi M. Yamamoto & Masaki Nakano & Masayuki Suda & Yoshihiro Iwasa & Masashi Kawasaki & Reizo Kato, 2013. "A strained organic field-effect transistor with a gate-tunable superconducting channel," Nature Communications, Nature, vol. 4(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3379
    DOI: 10.1038/ncomms3379
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