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LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces

Author

Listed:
  • M. P. Warusawithana

    (National High Magnetic Field Laboratory, Florida State University)

  • C. Richter

    (Center for Electronic Correlations and Magnetism, University of Augsburg
    Max-Planck-Institut für Festkörperforschung)

  • J. A. Mundy

    (School of Applied and Engineering Physics, Cornell University)

  • P. Roy

    (National High Magnetic Field Laboratory, Florida State University)

  • J. Ludwig

    (National High Magnetic Field Laboratory, Florida State University)

  • S. Paetel

    (Center for Electronic Correlations and Magnetism, University of Augsburg)

  • T. Heeg

    (Cornell University)

  • A. A. Pawlicki

    (National High Magnetic Field Laboratory, Florida State University)

  • L. F. Kourkoutis

    (School of Applied and Engineering Physics, Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • M. Zheng

    (University of Illinois at Urbana-Champaign)

  • M. Lee

    (National High Magnetic Field Laboratory, Florida State University)

  • B. Mulcahy

    (University of Illinois at Urbana-Champaign)

  • W. Zander

    (Peter Gruenberg Institute 9, JARA-Fundamentals of Future Information, Technologies, Research Centre Jülich)

  • Y. Zhu

    (School of Applied and Engineering Physics, Cornell University)

  • J. Schubert

    (Peter Gruenberg Institute 9, JARA-Fundamentals of Future Information, Technologies, Research Centre Jülich)

  • J. N. Eckstein

    (University of Illinois at Urbana-Champaign)

  • D. A. Muller

    (School of Applied and Engineering Physics, Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • C. Stephen Hellberg

    (Center for Computational Materials Science, Naval Research Laboratory)

  • J. Mannhart

    (Max-Planck-Institut für Festkörperforschung)

  • D. G. Schlom

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

Abstract

Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3) distinguish this rich system from conventional 2D electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated, with focus on the role of defects in the SrTiO3, while the LaAlO3 has been assumed perfect. Here we demonstrate, through experiments and first-principle calculations, that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. Although extrinsic defects, including oxygen deficiency, are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides insight for identifying other interfaces where emergent behaviours await discovery.

Suggested Citation

  • M. P. Warusawithana & C. Richter & J. A. Mundy & P. Roy & J. Ludwig & S. Paetel & T. Heeg & A. A. Pawlicki & L. F. Kourkoutis & M. Zheng & M. Lee & B. Mulcahy & W. Zander & Y. Zhu & J. Schubert & J. N, 2013. "LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces," Nature Communications, Nature, vol. 4(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3351
    DOI: 10.1038/ncomms3351
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