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Atomic-scale dynamic process of deformation-induced stacking fault tetrahedra in gold nanocrystals

Author

Listed:
  • Jiang Wei Wang

    (University of Pittsburgh)

  • Sankar Narayanan

    (Woodruff School of Mechanical Engineering and School of Materials Science and Engineering, Georgia Institute of Technology)

  • Jian Yu Huang
  • Ze Zhang

    (Zhejiang University)

  • Ting Zhu

    (Woodruff School of Mechanical Engineering and School of Materials Science and Engineering, Georgia Institute of Technology)

  • Scott X. Mao

    (University of Pittsburgh)

Abstract

Stacking fault tetrahedra, the three-dimensional crystalline defects bounded by stacking faults and stair-rod dislocations, are often observed in quenched or irradiated face-centred cubic metals and alloys. All of the stacking fault tetrahedra experimentally observed to date are believed to originate from vacancies. Here we report, in contrast to the classical vacancy-originated ones, a new kind of stacking fault tetrahedra formed via the interaction and cross-slip of partial dislocations in gold nanocrystals. The complete atomic-scale processes of nucleation, migration and annihilation of the dislocation-originated stacking fault tetrahedra are revealed by in situ high-resolution observations and molecular dynamics simulations. The dislocation-originated stacking fault tetrahedra can undergo migration and annihilation due to mechanical loading in a manner that is not expected in bulk samples. These results uncover a unique deformation mechanism via dislocation interaction inside the confined volume of nanocrystals and have important implications regarding the size effect on the mechanical behaviour of small-volume materials.

Suggested Citation

  • Jiang Wei Wang & Sankar Narayanan & Jian Yu Huang & Ze Zhang & Ting Zhu & Scott X. Mao, 2013. "Atomic-scale dynamic process of deformation-induced stacking fault tetrahedra in gold nanocrystals," Nature Communications, Nature, vol. 4(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3340
    DOI: 10.1038/ncomms3340
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