Author
Listed:
- Chris Mann
(Materials Science & Engineering Graduate Program, Texas Materials Institute, University of Texas at Austin, 204 E. Dean Keeton Street, Stop C2201)
- Damien West
(Applied Physics, and Astronomy, Rensselaer Polytechnic Institute)
- Ireneusz Miotkowski
(Purdue University)
- Yong P. Chen
(Purdue University
Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University)
- Shengbai Zhang
(Applied Physics, and Astronomy, Rensselaer Polytechnic Institute)
- Chih-Kang Shih
(Materials Science & Engineering Graduate Program, Texas Materials Institute, University of Texas at Austin, 204 E. Dean Keeton Street, Stop C2201
University of Texas at Austin)
Abstract
Bi2Se3 initially emerged as a particularly promising host of topological physics. However, in actual materials, several issues have been uncovered including strong surface band bending and potential fluctuations. To investigate these concerns, we study nominally stoichiometric Bi2Se3 using scanning tunnelling microscopy. Here we identify two distinct distributions of BiSe antisites that act as nanometer-scale sensors for the surface band-bending field. To confirm this, we examine bulk Cu-doped Bi2Se3 and demonstrate a significantly reduced surface band-bending field. In addition, we find that in the case of unintentionally doped Bi2Se3, lateral fluctuations of the Dirac point can be directly correlated with specific near-surface point defects, namely Se vacancies.
Suggested Citation
Chris Mann & Damien West & Ireneusz Miotkowski & Yong P. Chen & Shengbai Zhang & Chih-Kang Shih, 2013.
"Mapping the 3D surface potential in Bi2Se3,"
Nature Communications, Nature, vol. 4(1), pages 1-6, October.
Handle:
RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3277
DOI: 10.1038/ncomms3277
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