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A chiral-based magnetic memory device without a permanent magnet

Author

Listed:
  • Oren Ben Dor

    (Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem)

  • Shira Yochelis

    (Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem)

  • Shinto P. Mathew

    (Weizmann Institute of Science)

  • Ron Naaman

    (Weizmann Institute of Science)

  • Yossi Paltiel

    (Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem)

Abstract

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Suggested Citation

  • Oren Ben Dor & Shira Yochelis & Shinto P. Mathew & Ron Naaman & Yossi Paltiel, 2013. "A chiral-based magnetic memory device without a permanent magnet," Nature Communications, Nature, vol. 4(1), pages 1-6, October.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3256
    DOI: 10.1038/ncomms3256
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