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Valley spin polarization by using the extraordinary Rashba effect on silicon

Author

Listed:
  • Kazuyuki Sakamoto

    (Chiba University)

  • Tae-Hwan Kim

    (Pohang University of Science and Technology)

  • Takuya Kuzumaki

    (Chiba University)

  • Beate Müller

    (Chiba University)

  • Yuta Yamamoto

    (Chiba University)

  • Minoru Ohtaka

    (Chiba University)

  • Jacek R. Osiecki

    (Chemistry and Biology, Linköping University)

  • Koji Miyamoto

    (Hiroshima Synchrotron Radiation Centre, Hiroshima University)

  • Yasuo Takeichi

    (Institute for Solid State Physics, The University of Tokyo)

  • Ayumi Harasawa

    (Institute for Solid State Physics, The University of Tokyo)

  • Sebastian D. Stolwijk

    (Physikalisches Institut, Westfälische Wilhelms-Universität Münster)

  • Anke B. Schmidt

    (Physikalisches Institut, Westfälische Wilhelms-Universität Münster)

  • Jun Fujii

    (TASC Laboratory, IOM-CNR)

  • R. I. G. Uhrberg

    (Chemistry and Biology, Linköping University)

  • Markus Donath

    (Physikalisches Institut, Westfälische Wilhelms-Universität Münster)

  • Han Woong Yeom

    (Pohang University of Science and Technology)

  • Tatsuki Oda

    (Institute of Science and Engineering, Kanazawa University)

Abstract

The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency.

Suggested Citation

  • Kazuyuki Sakamoto & Tae-Hwan Kim & Takuya Kuzumaki & Beate Müller & Yuta Yamamoto & Minoru Ohtaka & Jacek R. Osiecki & Koji Miyamoto & Yasuo Takeichi & Ayumi Harasawa & Sebastian D. Stolwijk & Anke B., 2013. "Valley spin polarization by using the extraordinary Rashba effect on silicon," Nature Communications, Nature, vol. 4(1), pages 1-6, October.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3073
    DOI: 10.1038/ncomms3073
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