Author
Listed:
- B. Endres
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
- M. Ciorga
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
- M. Schmid
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
- M. Utz
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
- D. Bougeard
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
- D. Weiss
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
- G. Bayreuther
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
- C.H. Back
(Institut für Experimentelle und Angewandte Physik, Universität Regensburg)
Abstract
Spin injection and extraction are at the core of semiconductor spintronics. Electrical injection is one method of choice for the creation of a sizeable spin polarization in a semiconductor, requiring especially tailored tunnel or Schottky barriers. Alternatively, optical orientation can be used to generate spins in semiconductors with significant spin-orbit interaction, if optical selection rules are obeyed, typically by using circularly polarized light at a well-defined wavelength. Here we introduce a novel concept for spin injection/extraction that combines the principle of a solar cell with the creation of spin accumulation. We demonstrate that efficient optical spin injection can be achieved with unpolarized light by illuminating a p-n junction where the p-type region consists of a ferromagnet. The discovered mechanism opens the window for the optical generation of a sizeable spin accumulation also in semiconductors without direct band gap such as Si or Ge.
Suggested Citation
B. Endres & M. Ciorga & M. Schmid & M. Utz & D. Bougeard & D. Weiss & G. Bayreuther & C.H. Back, 2013.
"Demonstration of the spin solar cell and spin photodiode effect,"
Nature Communications, Nature, vol. 4(1), pages 1-5, October.
Handle:
RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3068
DOI: 10.1038/ncomms3068
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