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Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

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  • Lin Chen

    (WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira
    Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira)

  • Fumihiro Matsukura

    (WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira)

  • Hideo Ohno

    (WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira
    Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira)

Abstract

Spin pumping is the phenomenon that magnetization precession in a ferromagnetic layer under ferromagnetic resonance produces a pure spin current in an adjacent non-magnetic layer. The pure spin current is converted to a charge current by the spin–orbit interaction, and produces a d.c. voltage in the non-magnetic layer, which is called the inverse spin Hall effect. The combination of spin pumping and inverse spin Hall effect has been utilized to determine the spin Hall angle of the non-magnetic layer in various ferromagnetic/non-magnetic systems. Magnetization dynamics of ferromagnetic resonance also produces d.c. voltage in the ferromagnetic layer through galvanomagnetic effects. Here we show a method to separate voltages of different origins using (Ga,Mn)As/p-GaAs as a model system, where sizable galvanomagnetic effects are present. Neglecting the galvanomagnetic effects can lead to an overestimate of the spin Hall angle by factor of 8, indicating that separating the d.c. voltages of different origins is critical.

Suggested Citation

  • Lin Chen & Fumihiro Matsukura & Hideo Ohno, 2013. "Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance," Nature Communications, Nature, vol. 4(1), pages 1-6, October.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3055
    DOI: 10.1038/ncomms3055
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