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Coherent topological transport on the surface of Bi2Se3

Author

Listed:
  • Dohun Kim

    (Center for Nanophysics and Advanced Materials, University of Maryland)

  • Paul Syers

    (Center for Nanophysics and Advanced Materials, University of Maryland)

  • Nicholas P. Butch

    (Lawrence Livermore National Laboratory)

  • Johnpierre Paglione

    (Center for Nanophysics and Advanced Materials, University of Maryland)

  • Michael S. Fuhrer

    (Center for Nanophysics and Advanced Materials, University of Maryland
    School of Physics, Monash University)

Abstract

The two-dimensional surface of the three-dimensional topological insulator is in the symplectic universality class and should exhibit perfect weak antilocalization reflected in positive weak-field magneto-resistance. Previous studies in topological insulator thin films suffer from high level of bulk n-type doping making quantitative analysis of weak antilocalization difficult. Here we measure the magneto-resistance of bulk-insulating Bi2Se3 thin films as a function of film thickness and gate-tuned carrier density. For thick samples, the magnitude of weak antilocalization indicates two decoupled (top and bottom) symplectic surfaces. On reducing thickness, we observe first a crossover to a single symplectic channel, indicating coherent coupling of top and bottom surfaces via interlayer tunnelling, and second, a complete suppression of weak antilocalization. The first crossover is governed by the ratio of phase coherence time to the inter-surface tunnelling time, and the second crossover occurs when the hybridization gap becomes comparable to the disorder strength.

Suggested Citation

  • Dohun Kim & Paul Syers & Nicholas P. Butch & Johnpierre Paglione & Michael S. Fuhrer, 2013. "Coherent topological transport on the surface of Bi2Se3," Nature Communications, Nature, vol. 4(1), pages 1-5, October.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3040
    DOI: 10.1038/ncomms3040
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