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Two-barrier stability that allows low-power operation in current-induced domain-wall motion

Author

Listed:
  • Kab-Jin Kim

    (Institute for Chemical Research, Kyoto University, Gokasho)

  • Ryo Hiramatsu

    (Institute for Chemical Research, Kyoto University, Gokasho)

  • Tomohiro Koyama

    (Institute for Chemical Research, Kyoto University, Gokasho)

  • Kohei Ueda

    (Institute for Chemical Research, Kyoto University, Gokasho)

  • Yoko Yoshimura

    (Institute for Chemical Research, Kyoto University, Gokasho)

  • Daichi Chiba

    (Institute for Chemical Research, Kyoto University, Gokasho
    PRESTO, Japan Science and Technology Agency)

  • Kensuke Kobayashi

    (Institute for Chemical Research, Kyoto University, Gokasho)

  • Yoshinobu Nakatani

    (University of Electro-communications)

  • Shunsuke Fukami

    (Center for Spintronics Integrated Systems, Tohoku University)

  • Michihiko Yamanouchi

    (Center for Spintronics Integrated Systems, Tohoku University
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University)

  • Hideo Ohno

    (Center for Spintronics Integrated Systems, Tohoku University
    Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
    WPI Advanced Institute for Materials Research, Tohoku University)

  • Hiroshi Kohno

    (Graduate School of Engineering Science, Osaka University)

  • Gen Tatara

    (Tokyo Metropolitan University
    RIKEN Center for Emergent Matter Science)

  • Teruo Ono

    (Institute for Chemical Research, Kyoto University, Gokasho)

Abstract

Energy barriers in magnetization reversal dynamics have long been of interest because the barrier height determines the thermal stability of devices as well as the threshold force triggering their dynamics. Especially in memory and logic applications, there is a dilemma between the thermal stability of bit data and the operation power of devices, because larger energy barriers for higher thermal stability inevitably lead to larger magnetic fields (or currents) for operation. Here we show that this is not the case for current-induced magnetic domain-wall motion induced by adiabatic spin-transfer torque. By quantifying domain-wall depinning energy barriers by magnetic field and current, we find that there exist two different pinning barriers, extrinsic and intrinsic energy barriers, which govern the thermal stability and threshold current, respectively. This unique two-barrier system allows low-power operation with high thermal stability, which is impossible in conventional single-barrier systems.

Suggested Citation

  • Kab-Jin Kim & Ryo Hiramatsu & Tomohiro Koyama & Kohei Ueda & Yoko Yoshimura & Daichi Chiba & Kensuke Kobayashi & Yoshinobu Nakatani & Shunsuke Fukami & Michihiko Yamanouchi & Hideo Ohno & Hiroshi Kohn, 2013. "Two-barrier stability that allows low-power operation in current-induced domain-wall motion," Nature Communications, Nature, vol. 4(1), pages 1-6, October.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3011
    DOI: 10.1038/ncomms3011
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