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Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

Author

Listed:
  • Heedeuk Shin

    (Sandia National Laboratories)

  • Wenjun Qiu

    (Massachusetts Institute of Technology)

  • Robert Jarecki

    (Sandia National Laboratories)

  • Jonathan A. Cox

    (Sandia National Laboratories)

  • Roy H. Olsson

    (Sandia National Laboratories)

  • Andrew Starbuck

    (Sandia National Laboratories)

  • Zheng Wang

    (University of Texas at Austin)

  • Peter T. Rakich

    (Yale University)

Abstract

Nanoscale modal confinement is known to radically enhance the effect of intrinsic Kerr and Raman nonlinearities within nanophotonic silicon waveguides. By contrast, stimulated Brillouin-scattering nonlinearities, which involve coherent coupling between guided photon and phonon modes, are stifled in conventional nanophotonics, preventing the realization of a host of Brillouin-based signal-processing technologies in silicon. Here we demonstrate stimulated Brillouin scattering in silicon waveguides, for the first time, through a new class of hybrid photonic–phononic waveguides. Tailorable travelling-wave forward-stimulated Brillouin scattering is realized—with over 1,000 times larger nonlinearity than reported in previous systems—yielding strong Brillouin coupling to phonons from 1 to 18 GHz. Experiments show that radiation pressures, produced by subwavelength modal confinement, yield enhancement of Brillouin nonlinearity beyond those of material nonlinearity alone. In addition, such enhanced and wideband coherent phonon emission paves the way towards the hybridization of silicon photonics, microelectromechanical systems and CMOS signal-processing technologies on chip.

Suggested Citation

  • Heedeuk Shin & Wenjun Qiu & Robert Jarecki & Jonathan A. Cox & Roy H. Olsson & Andrew Starbuck & Zheng Wang & Peter T. Rakich, 2013. "Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides," Nature Communications, Nature, vol. 4(1), pages 1-10, October.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms2943
    DOI: 10.1038/ncomms2943
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