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Fabrication of flexible and freestanding zinc chalcogenide single layers

Author

Listed:
  • Yongfu Sun

    (Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China)

  • Zhihu Sun

    (National Synchrotron Radiation Laboratory, University of Science and Technology of China)

  • Shan Gao

    (Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China)

  • Hao Cheng

    (National Synchrotron Radiation Laboratory, University of Science and Technology of China)

  • Qinghua Liu

    (National Synchrotron Radiation Laboratory, University of Science and Technology of China)

  • Junyu Piao

    (Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China)

  • Tao Yao

    (National Synchrotron Radiation Laboratory, University of Science and Technology of China)

  • Changzheng Wu

    (Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China)

  • Shuanglin Hu

    (The Ångström Laboratory, Uppsala University)

  • Shiqiang Wei

    (National Synchrotron Radiation Laboratory, University of Science and Technology of China)

  • Yi Xie

    (Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China)

Abstract

Inorganic graphene analogues (IGAs) are a conceptually new class of materials with attractive applications in next-generation flexible and transparent nanodevices. However, their species are only limited to layered compounds, and the difficulty in extension to non-layered compounds hampers their widespread applicability. Here we report the fabrication of large-area freestanding single layers of non-layered ZnSe with four-atomic thickness, using a strategy involving a lamellar hybrid intermediate. Their surface distortion, revealed by means of synchrotron radiation X-ray absorption fine structure spectroscopy, is shown to give rise to a unique electronic structure and an excellent structural stability, thus determining an enhanced solar water splitting efficiency and photostability. The ZnSe single layers exhibit a photocurrent density of 2.14 mA cm−2 at 0.72 V versus Ag/AgCl under 300 W Xe lamp irradiation, 195 times higher than that of bulk counterpart. This work opens the door for extending atomically thick IGAs to non-layered compounds and holds promise for a wealth of innovative applications.

Suggested Citation

  • Yongfu Sun & Zhihu Sun & Shan Gao & Hao Cheng & Qinghua Liu & Junyu Piao & Tao Yao & Changzheng Wu & Shuanglin Hu & Shiqiang Wei & Yi Xie, 2012. "Fabrication of flexible and freestanding zinc chalcogenide single layers," Nature Communications, Nature, vol. 3(1), pages 1-7, January.
  • Handle: RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms2066
    DOI: 10.1038/ncomms2066
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