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Observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene

Author

Listed:
  • Ramesh G. Mani

    (Georgia State University)

  • John Hankinson

    (School of Physics, Georgia Institute of Technology)

  • Claire Berger

    (School of Physics, Georgia Institute of Technology
    CNRS, Institut Néel)

  • Walter A. de Heer

    (School of Physics, Georgia Institute of Technology)

Abstract

Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic material to complement–or replace–silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics and spin-based quantum computing. As a result, the detection, characterization and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical response and dual microwave-induced resonances in the dc resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time and the sub-lattice degeneracy splitting at zero magnetic field.

Suggested Citation

  • Ramesh G. Mani & John Hankinson & Claire Berger & Walter A. de Heer, 2012. "Observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene," Nature Communications, Nature, vol. 3(1), pages 1-6, January.
    • Handle: RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1986
    DOI: 10.1038/ncomms1986
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