Author
Listed:
- Zheng Liu
(Rice University)
- Yongjie Zhan
(Rice University)
- Gang Shi
(Rice University)
- Simona Moldovan
(Institut de Physique et Chimie des Matériaux, UMR 7504 CNRS, Université de Strasbourg)
- Mohamed Gharbi
(University of Houston)
- Li Song
(Research Center for Exotic Nanocarbons, Shinshu University
National Synchrotron Radiation Laboratory, University of Science and Technology of China)
- Lulu Ma
(Rice University)
- Wei Gao
(Rice University)
- Jiaqi Huang
(Rice University
Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Tsinghua University)
- Robert Vajtai
(Rice University)
- Florian Banhart
(Institut de Physique et Chimie des Matériaux, UMR 7504 CNRS, Université de Strasbourg)
- Pradeep Sharma
(University of Houston
University of Houston)
- Jun Lou
(Rice University)
- Pulickel M. Ajayan
(Rice University)
Abstract
Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu2O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm−2, exceeding previous reported values for metal–insulator–metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric–metal interface, enhanced significantly at the nanoscale.
Suggested Citation
Zheng Liu & Yongjie Zhan & Gang Shi & Simona Moldovan & Mohamed Gharbi & Li Song & Lulu Ma & Wei Gao & Jiaqi Huang & Robert Vajtai & Florian Banhart & Pradeep Sharma & Jun Lou & Pulickel M. Ajayan, 2012.
"Anomalous high capacitance in a coaxial single nanowire capacitor,"
Nature Communications, Nature, vol. 3(1), pages 1-7, January.
Handle:
RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1833
DOI: 10.1038/ncomms1833
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