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Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

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  • Seung Sae Hong

    (Stanford University)

  • Judy J. Cha

    (Stanford University)

  • Desheng Kong

    (Stanford University)

  • Yi Cui

    (Stanford University
    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory)

Abstract

A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×1011 cm−2. The zinc oxide-capped, antimony-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.

Suggested Citation

  • Seung Sae Hong & Judy J. Cha & Desheng Kong & Yi Cui, 2012. "Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons," Nature Communications, Nature, vol. 3(1), pages 1-7, January.
    • Handle: RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1771
    DOI: 10.1038/ncomms1771
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