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Wide bandgap tunability in complex transition metal oxides by site-specific substitution

Author

Listed:
  • Woo Seok Choi

    (Oak Ridge National Laboratory)

  • Matthew F. Chisholm

    (Oak Ridge National Laboratory)

  • David J. Singh

    (Oak Ridge National Laboratory)

  • Taekjib Choi

    (Oak Ridge National Laboratory)

  • Gerald E. Jellison

    (Oak Ridge National Laboratory)

  • Ho Nyung Lee

    (Oak Ridge National Laboratory)

Abstract

Fabricating complex transition metal oxides with a tunable bandgap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its bandgap can be narrowed by as much as 1 eV, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the bandgap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the bandgap in complex oxides for use in emerging oxide optoelectronic and energy applications.

Suggested Citation

  • Woo Seok Choi & Matthew F. Chisholm & David J. Singh & Taekjib Choi & Gerald E. Jellison & Ho Nyung Lee, 2012. "Wide bandgap tunability in complex transition metal oxides by site-specific substitution," Nature Communications, Nature, vol. 3(1), pages 1-6, January.
    • Handle: RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1690
    DOI: 10.1038/ncomms1690
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