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Suppression of the intrinsic stochastic pinning of domain walls in magnetic nanostripes

Author

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  • Manuel Muñoz

    (Instituto de Microelectrónica de Madrid (CNM, CSIC), Isaac Newton 8, Tres Cantos)

  • José L. Prieto

    (Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM)—Universidad Politécnica de Madrid, Avda. Complutense s/n)

Abstract

Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6–2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes.

Suggested Citation

  • Manuel Muñoz & José L. Prieto, 2011. "Suppression of the intrinsic stochastic pinning of domain walls in magnetic nanostripes," Nature Communications, Nature, vol. 2(1), pages 1-5, September.
    • Handle: RePEc:nat:natcom:v:2:y:2011:i:1:d:10.1038_ncomms1575
    DOI: 10.1038/ncomms1575
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