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Li(Zn,Mn)As as a new generation ferromagnet based on a I–II–V semiconductor

Author

Listed:
  • Z. Deng

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • C.Q. Jin

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • Q.Q. Liu

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • X.C. Wang

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • J.L. Zhu

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • S.M. Feng

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • L.C. Chen

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • R.C. Yu

    (Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.)

  • C. Arguello

    (Columbia University, New York, New York 10027, USA.)

  • T. Goko

    (Columbia University, New York, New York 10027, USA.)

  • Fanlong Ning

    (Columbia University, New York, New York 10027, USA.
    Zhejiang University, Hangzhou 310027, China.)

  • Jinsong Zhang

    (Tsinghua University, Beijing 100084, China.)

  • Yayu Wang

    (Tsinghua University, Beijing 100084, China.)

  • A.A. Aczel

    (McMaster University, Hamilton, Ontario, L8S 4M1 Canada.)

  • T. Munsie

    (McMaster University, Hamilton, Ontario, L8S 4M1 Canada.)

  • T.J. Williams

    (McMaster University, Hamilton, Ontario, L8S 4M1 Canada.)

  • G.M. Luke

    (McMaster University, Hamilton, Ontario, L8S 4M1 Canada.)

  • T. Kakeshita

    (University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-8656, Japan.)

  • S. Uchida

    (University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113-8656, Japan.)

  • W. Higemoto

    (Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.)

  • T.U. Ito

    (Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.)

  • Bo Gu

    (Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.
    CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan.)

  • S. Maekawa

    (Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.
    CREST, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan.)

  • G.D. Morris

    (TRIUMF, 4004 Wesbrook Mall, Vancouver, British Columbia, V6T 2A3 Canada.)

  • Y.J. Uemura

    (Columbia University, New York, New York 10027, USA.)

Abstract

In a prototypical ferromagnet (Ga,Mn)As based on a III–V semiconductor, substitution of divalent Mn atoms into trivalent Ga sites leads to severely limited chemical solubility and metastable specimens available only as thin films. The doping of hole carriers via (Ga,Mn) substitution also prohibits electron doping. To overcome these difficulties, Masek et al. theoretically proposed systems based on a I–II–V semiconductor LiZnAs, where isovalent (Zn,Mn) substitution is decoupled from carrier doping with excess/deficient Li concentrations. Here we show successful synthesis of Li1+y(Zn1−xMnx)As in bulk materials. Ferromagnetism with a critical temperature of up to 50 K is observed in nominally Li-excess (y=0.05–0.2) compounds with Mn concentrations of x=0.02–0.15, which have p-type metallic carriers. This is presumably due to excess Li in substitutional Zn sites. Semiconducting LiZnAs, ferromagnetic Li(Zn,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs systems share square lattice As layers, which may enable development of novel junction devices in the future.

Suggested Citation

  • Z. Deng & C.Q. Jin & Q.Q. Liu & X.C. Wang & J.L. Zhu & S.M. Feng & L.C. Chen & R.C. Yu & C. Arguello & T. Goko & Fanlong Ning & Jinsong Zhang & Yayu Wang & A.A. Aczel & T. Munsie & T.J. Williams & G.M, 2011. "Li(Zn,Mn)As as a new generation ferromagnet based on a I–II–V semiconductor," Nature Communications, Nature, vol. 2(1), pages 1-5, September.
    • Handle: RePEc:nat:natcom:v:2:y:2011:i:1:d:10.1038_ncomms1425
    DOI: 10.1038/ncomms1425
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