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Creation of a two-dimensional electron gas at an oxide interface on silicon

Author

Listed:
  • J.W. Park

    (University of Wisconsin-Madison)

  • D.F. Bogorin

    (University of Pittsburgh)

  • C. Cen

    (University of Pittsburgh)

  • D.A. Felker

    (University of Wisconsin-Madison)

  • Y. Zhang

    (University of Michigan)

  • C.T. Nelson

    (University of Michigan)

  • C.W. Bark

    (University of Wisconsin-Madison)

  • C.M. Folkman

    (University of Wisconsin-Madison)

  • X.Q. Pan

    (University of Michigan)

  • M.S. Rzchowski

    (University of Wisconsin-Madison)

  • J. Levy

    (University of Pittsburgh)

  • C.B. Eom

    (University of Wisconsin-Madison)

Abstract

In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO3/SrTiO3 (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO3 bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.

Suggested Citation

  • J.W. Park & D.F. Bogorin & C. Cen & D.A. Felker & Y. Zhang & C.T. Nelson & C.W. Bark & C.M. Folkman & X.Q. Pan & M.S. Rzchowski & J. Levy & C.B. Eom, 2010. "Creation of a two-dimensional electron gas at an oxide interface on silicon," Nature Communications, Nature, vol. 1(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:1:y:2010:i:1:d:10.1038_ncomms1096
    DOI: 10.1038/ncomms1096
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