Author
Listed:
- Koichiro Yaji
(Graduate School of Science, Kyoto University
JST CREST)
- Yoshiyuki Ohtsubo
(Graduate School of Science, Kyoto University)
- Shinichiro Hatta
(Graduate School of Science, Kyoto University
JST CREST)
- Hiroshi Okuyama
(Graduate School of Science, Kyoto University)
- Koji Miyamoto
(Hiroshima Synchrotron Radiation Center, Hiroshima University)
- Taichi Okuda
(Hiroshima Synchrotron Radiation Center, Hiroshima University)
- Akio Kimura
(Graduate School of Science, Hiroshima University)
- Hirofumi Namatame
(Hiroshima Synchrotron Radiation Center, Hiroshima University)
- Masaki Taniguchi
(Hiroshima Synchrotron Radiation Center, Hiroshima University
Graduate School of Science, Hiroshima University)
- Tetsuya Aruga
(Graduate School of Science, Kyoto University
JST CREST)
Abstract
The generation of spin-polarized electrons at room temperature is an essential step in developing semiconductor spintronic applications. To this end, we studied the electronic states of a Ge(111) surface, covered with a lead monolayer at a fractional coverage of 4/3, by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES and first-principles electronic structure calculation. We demonstrate that a metallic surface-state band with a dominant Pb 6p character exhibits a large Rashba spin splitting of 200 meV and an effective mass of 0.028 me at the Fermi level. This finding provides a material basis for the novel field of spin transport/accumulation on semiconductor surfaces. Charge density analysis of the surface state indicated that large spin splitting was induced by asymmetric charge distribution in close proximity to the nuclei of Pb atoms.
Suggested Citation
Koichiro Yaji & Yoshiyuki Ohtsubo & Shinichiro Hatta & Hiroshi Okuyama & Koji Miyamoto & Taichi Okuda & Akio Kimura & Hirofumi Namatame & Masaki Taniguchi & Tetsuya Aruga, 2010.
"Large Rashba spin splitting of a metallic surface-state band on a semiconductor surface,"
Nature Communications, Nature, vol. 1(1), pages 1-5, December.
Handle:
RePEc:nat:natcom:v:1:y:2010:i:1:d:10.1038_ncomms1016
DOI: 10.1038/ncomms1016
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