Author
Listed:
- Yuki Sato
(RIKEN Center for Emergent Matter Science (CEMS))
- Soma Nagahama
(University of Tokyo, Department of Applied Physics and Quantum-phase Electronics Center (QPEC))
- Shunsuke Kitou
(University of Tokyo, Department of Advanced Materials Science)
- Hajime Sagayama
(High Energy Accelerator Research Organization, Institute of Materials Structure Science)
- Ilya Belopolski
(RIKEN Center for Emergent Matter Science (CEMS))
- Ryutaro Yoshimi
(RIKEN Center for Emergent Matter Science (CEMS)
University of Tokyo, Department of Advanced Materials Science)
- Minoru Kawamura
(RIKEN Center for Emergent Matter Science (CEMS))
- Atsushi Tsukazaki
(University of Tokyo, Department of Applied Physics and Quantum-phase Electronics Center (QPEC)
Tohoku University, Institute for Materials Research (IMR))
- Naoya Kanazawa
(University of Tokyo, Institute of Industrial Science)
- Takuya Nomoto
(Tokyo Metropolitan University, Hachioji, Department of Physics)
- Ryotaro Arita
(RIKEN Center for Emergent Matter Science (CEMS)
University of Tokyo, Department of Physics)
- Taka-hisa Arima
(RIKEN Center for Emergent Matter Science (CEMS)
University of Tokyo, Department of Advanced Materials Science)
- Masashi Kawasaki
(RIKEN Center for Emergent Matter Science (CEMS)
University of Tokyo, Department of Applied Physics and Quantum-phase Electronics Center (QPEC))
- Yoshinori Tokura
(RIKEN Center for Emergent Matter Science (CEMS)
University of Tokyo, Department of Applied Physics and Quantum-phase Electronics Center (QPEC)
University of Tokyo, Tokyo College)
Abstract
Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However, significant lattice mismatches can result in higher-order epitaxy, where commensurate growth occurs with a period defined by integer multiples of the lattice constants. Despite its potential, higher-order epitaxy is rarely used to enhance material properties or induce emergent phenomena. Here, we report single-crystalline FeTe films grown via 6:5 commensurate higher-order epitaxy on CdTe(001) substrates. Scanning transmission electron microscopy reveals self-organised periodic interstitials near the interface, arising from higher-order lattice matching. Synchrotron x-ray diffraction shows that the tetragonal-to-monoclinic structural transition in bulk FeTe is strongly suppressed. Remarkably, these films exhibit substrate-selective two-dimensional superconductivity, likely due to suppressed monoclinic distortion. These findings demonstrate the potential of higher-order epitaxy as a tool to control materials and inducing emergent phenomena.
Suggested Citation
Yuki Sato & Soma Nagahama & Shunsuke Kitou & Hajime Sagayama & Ilya Belopolski & Ryutaro Yoshimi & Minoru Kawamura & Atsushi Tsukazaki & Naoya Kanazawa & Takuya Nomoto & Ryotaro Arita & Taka-hisa Arim, 2025.
"Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy,"
Nature Communications, Nature, vol. 16(1), pages 1-8, December.
Handle:
RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-65902-w
DOI: 10.1038/s41467-025-65902-w
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