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Achieving superior radiation tolerance in ceramics via in-situ defect recombination

Author

Listed:
  • Congping Quan

    (China Academy of Engineering Physics, Institute of Materials)

  • Qingqiao Fu

    (Shanghai University, School of Materials Science and Engineering, Materials Genome Institute)

  • Ruizhi Qiu

    (China Academy of Engineering Physics, Institute of Materials)

  • Guoliang Zhao

    (China Academy of Engineering Physics, Institute of Materials)

  • Chen Xu

    (China Academy of Engineering Physics, Institute of Materials)

Abstract

Materials that can withstand high radiation doses are crucial for the development of various cutting-edge technologies, such as aerospace, next-generation fission, and future fusion energy. However, few materials can withstand intense radiation doses without suffering from irreversible materials degradation. Herein, we present a strategy to achieve high radiation tolerance by a dynamic in-situ defect recombination, where abundant solutes thermodynamically stabilized within the ceramic lattice combine with radiation-induced defects. We demonstrate that in high-entropy pyrochlore oxide (HEPO) based solid solutions, little microstructure damage is observed even after He2+ radiation with energy of 500 keV and 1 × 1017 ions/cm2 fluence. HEPO solid solutions exhibit a counterintuitive reordering transition: their structural ordering improves rather than degrades after irradiation. This can be attributed to an in-situ defect recombination, which not only annihilates the radiation-induced defects but also alleviates the lattice distortions. This strategy represents a promising approach for developing materials with high radiation tolerance.

Suggested Citation

  • Congping Quan & Qingqiao Fu & Ruizhi Qiu & Guoliang Zhao & Chen Xu, 2025. "Achieving superior radiation tolerance in ceramics via in-situ defect recombination," Nature Communications, Nature, vol. 16(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-65545-x
    DOI: 10.1038/s41467-025-65545-x
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