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Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain

Author

Listed:
  • Alessandro Buzzi

    (Massachusetts Institute of Technology)

  • Camille Papon

    (Massachusetts Institute of Technology)

  • Matteo Pirro

    (Delft University of Technology
    Delft University of Technology)

  • Odiel Hooybergs

    (Massachusetts Institute of Technology)

  • Hamza Raniwala

    (Massachusetts Institute of Technology)

  • Valeria Saggio

    (Massachusetts Institute of Technology)

  • Carlos Errando-Herranz

    (Delft University of Technology
    Delft University of Technology)

  • Dirk Englund

    (Massachusetts Institute of Technology)

Abstract

The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter’s optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a digital twin physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform.

Suggested Citation

  • Alessandro Buzzi & Camille Papon & Matteo Pirro & Odiel Hooybergs & Hamza Raniwala & Valeria Saggio & Carlos Errando-Herranz & Dirk Englund, 2025. "Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain," Nature Communications, Nature, vol. 16(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-63871-8
    DOI: 10.1038/s41467-025-63871-8
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