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Anomalous photoelectrochemical etching of undoped semiconductor surfaces

Author

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  • Pan Peng

    (Huazhong University of Science and Technology, State Key Laboratory of Intelligent Manufacturing Equipment and Technology
    Research Institute of Huazhong University of Science and Technology Shenzhen
    Optics Valley Laboratory)

  • Xinqin Liu

    (Huazhong University of Science and Technology, State Key Laboratory of Intelligent Manufacturing Equipment and Technology
    Research Institute of Huazhong University of Science and Technology Shenzhen
    Optics Valley Laboratory)

  • Shuming Yang

    (Xi’an Jiaotong University, State Key Laboratory for Manufacturing Systems Engineering)

  • Renjie Zhou

    (The Chinese University of Hong Kong, Department of Biomedical Engineering)

  • Hui Deng

    (Southern University of Science and Technology, Department of Mechanical and Energy Engineering)

  • Liang Gao

    (Huazhong University of Science and Technology, State Key Laboratory of Intelligent Manufacturing Equipment and Technology)

  • Nicholas X. Fang

    (University of Hong Kong, Department of Mechanical Engineering)

  • Shiyuan Liu

    (Huazhong University of Science and Technology, State Key Laboratory of Intelligent Manufacturing Equipment and Technology
    Optics Valley Laboratory)

  • Jinlong Zhu

    (Huazhong University of Science and Technology, State Key Laboratory of Intelligent Manufacturing Equipment and Technology
    Research Institute of Huazhong University of Science and Technology Shenzhen
    Optics Valley Laboratory)

Abstract

For more than 60 years, it has been widely accepted that the irradiance of the incoming light plays the most critical role in the etching effect of the photoelectrochemical etching process, which is built upon the underlying physics that photo-generated charge carriers catalyze the dissolution of n-type semiconductors. However, in this paper, we report an anomalous physical phenomenon, i.e., the spatially distributed photons with a lateral gradient could drive the lateral distribution of carriers on the surface of semiconductors, which leads to the anomalous etching phenomenon on the surface of undoped semiconductor materials during the PEC etching process. Research shows that parameters such as light intensity, light intensity gradient, and carrier diffusion length are significantly correlated with this process. This discovery provides a potential method of rapid and large-scale 3D nanomanufacturing on semiconductor materials, which holds promise for significant applications in diverse fields such as microelectronics, nanophotonics, microelectromechanical systems (MEMS), and biomedicine.

Suggested Citation

  • Pan Peng & Xinqin Liu & Shuming Yang & Renjie Zhou & Hui Deng & Liang Gao & Nicholas X. Fang & Shiyuan Liu & Jinlong Zhu, 2025. "Anomalous photoelectrochemical etching of undoped semiconductor surfaces," Nature Communications, Nature, vol. 16(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-63252-1
    DOI: 10.1038/s41467-025-63252-1
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    References listed on IDEAS

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    1. Junyong Park & Shuodao Wang & Ming Li & Changui Ahn & Jerome K. Hyun & Dong Seok Kim & Do Kyung Kim & John A. Rogers & Yonggang Huang & Seokwoo Jeon, 2012. "Three-dimensional nanonetworks for giant stretchability in dielectrics and conductors," Nature Communications, Nature, vol. 3(1), pages 1-8, January.
    2. Eduardo Gil-Santos & Christopher Baker & Aristide Lemaître & Sara Ducci & Carmen Gomez & Giuseppe Leo & Ivan Favero, 2017. "Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching," Nature Communications, Nature, vol. 8(1), pages 1-7, April.
    3. M. Campbell & D. N. Sharp & M. T. Harrison & R. G. Denning & A. J. Turberfield, 2000. "Fabrication of photonic crystals for the visible spectrum by holographic lithography," Nature, Nature, vol. 404(6773), pages 53-56, March.
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