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Interface-controlled uniaxial in-plane ferroelectricity in Hf0.5Zr0.5O2(100) epitaxial thin films

Author

Listed:
  • Kai Liu

    (University of Science and Technology of China)

  • Feng Jin

    (University of Science and Technology of China)

  • Tianyuan Zhu

    (Westlake University
    Westlake Institute for Advanced Study)

  • Jie Fang

    (University of Science and Technology of China)

  • Xingchang Zhang

    (Hunan University)

  • Erhao Peng

    (University of Science and Technology of China)

  • Kuan Liu

    (University of Science and Technology of China)

  • Qiming Lv

    (University of Science and Technology of China)

  • Kunjie Dai

    (University of Science and Technology of China)

  • Yajun Tao

    (University of Science and Technology of China)

  • Jingdi Lu

    (University of Science and Technology of China)

  • Haoliang Huang

    (Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area)

  • Jiachen Li

    (University of Science and Technology of China)

  • Shouzhe Dong

    (Beijing Institute of Technology)

  • Shengchun Shen

    (University of Science and Technology of China)

  • Yuewei Yin

    (University of Science and Technology of China)

  • Houbing Huang

    (Beijing Institute of Technology)

  • Zhenlin Luo

    (University of Science and Technology of China)

  • Chao Ma

    (Hunan University)

  • Shi Liu

    (Westlake University
    Westlake Institute for Advanced Study)

  • Lingfei Wang

    (University of Science and Technology of China)

  • Wenbin Wu

    (University of Science and Technology of China
    Anhui University
    Nanjing University)

Abstract

Hafnium oxide-based ferroelectric thin films are widely recognized as a CMOS-compatible and highly scalable material platform for next-generation non-volatile memory and logic devices. While out-of-plane ferroelectricity in hafnium oxide films has been intensively investigated and utilized in devices, purely in-plane ferroelectricity of hafnium oxides remains unexplored. In this work, we demonstrate a reversible structural modulation of the orthorhombic phase Hf0.5Zr0.5O2 films between (111)-oriented [HZO(111)O] multi-domain and (100)-oriented [HZO(100)O] single-domain configurations by altering perovskite oxide buffer layers. Unlike conventional out-of-plane polarized HZO(111)O films, the HZO(100)O films exhibit uniaxial in-plane ferroelectric polarization, sustained even at a thickness of 1.0 nm. Furthermore, the in-plane ferroelectric switching achieves an ultralow coercivity of ~0.5 MV/cm. The HZO(100)O phase is stabilized by a staggered interfacial reconstruction, driven by the delicate interplays between symmetry mismatch and surface energy. These findings pave the way for innovative device designs and strategies for modulating the functionalities of hafnium oxide-based ferroelectrics.

Suggested Citation

  • Kai Liu & Feng Jin & Tianyuan Zhu & Jie Fang & Xingchang Zhang & Erhao Peng & Kuan Liu & Qiming Lv & Kunjie Dai & Yajun Tao & Jingdi Lu & Haoliang Huang & Jiachen Li & Shouzhe Dong & Shengchun Shen & , 2025. "Interface-controlled uniaxial in-plane ferroelectricity in Hf0.5Zr0.5O2(100) epitaxial thin films," Nature Communications, Nature, vol. 16(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-62610-3
    DOI: 10.1038/s41467-025-62610-3
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