Author
Listed:
- Aaron N. Chan
(University of Illinois at Urbana-Champaign)
- Co D. Quach
(University of Illinois at Urbana-Champaign)
- Lucas J. Handlin
(Saint Louis University School of Medicine)
- Erin N. Lessie
(Saint Louis University School of Medicine)
- Emad Tajkhorshid
(University of Illinois at Urbana-Champaign)
- Gucan Dai
(Saint Louis University School of Medicine)
Abstract
Voltage sensors are essential for electromechanical coupling in hERG K+ channels, critical to cardiac rhythm. These sensors respond to membrane potential changes by moving within the transmembrane electric field. Mutations in hERG voltage-sensing arginines, associated with Long-QT syndrome, alter channel gating, though underlying mechanisms remain unclear. Using live-cell fluorescence lifetime imaging microscopy, transition metal FRET, an improved dual stop-codon-mediated strategy for noncanonical amino-acid incorporation, and molecular dynamics simulations, we identify intermediate voltage-sensor conformations induced by neutralizing key arginines in the charge transfer center. Phasor plot analysis of lifetime data reveals multiple voltage-dependent FRET states in these mutants, in contrast to the single high-FRET state observed in controls. These intermediate FRET states reflect distinct conformations of the voltage sensor, corresponding to predicted structures of voltage sensors in molecular dynamics simulations. This study provides insights into cardiac channelopathies, highlighting a structural mechanism that impairs voltage sensing in cardiac arrhythmias.
Suggested Citation
Aaron N. Chan & Co D. Quach & Lucas J. Handlin & Erin N. Lessie & Emad Tajkhorshid & Gucan Dai, 2025.
"Voltage sensor conformations induced by LQTS-associated mutations in hERG potassium channels,"
Nature Communications, Nature, vol. 16(1), pages 1-19, December.
Handle:
RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-62472-9
DOI: 10.1038/s41467-025-62472-9
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