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Floquet-Bloch valleytronics

Author

Listed:
  • Sotirios Fragkos

    (UMR5107)

  • Baptiste Fabre

    (UMR5107)

  • Olena Tkach

    (Institut für Physik
    Sumy State University)

  • Stéphane Petit

    (UMR5107)

  • Dominique Descamps

    (UMR5107)

  • Gerd Schönhense

    (Institut für Physik)

  • Yann Mairesse

    (UMR5107)

  • Michael Schüler

    (PSI Center for Scientific Computing, Theory and Data
    University of Fribourg)

  • Samuel Beaulieu

    (UMR5107)

Abstract

Upon time-periodic driving of electrons using electromagnetic fields, the emergence of Floquet-Bloch states enables the creation and control of exotic quantum phases. In transition metal dichalcogenides, broken inversion symmetry within each monolayer results in Berry curvature at the K and K′ valley extrema, giving rise to chiroptical selection rules that are fundamental to valleytronics. Here, we bridge the gap between these two concepts and introduce Floquet-Bloch valleytronics. Using time- and polarization-resolved extreme ultraviolet momentum microscopy combined with state-of-the-art ab initio theory, we demonstrate the formation of valley-polarized Floquet-Bloch states in 2H-WSe2 upon below-bandgap driving with circularly polarized light pulses. We investigate quantum-path interference between Floquet-Bloch and Volkov states, revealing its dependence on the valley pseudospin and light polarization. Extreme ultraviolet photoemission circular dichroism in these non-equilibrium settings reveals the potential for controlling the orbital character of Floquet-engineered states. These findings link Floquet engineering and quantum-geometric light-matter coupling in two-dimensional materials.

Suggested Citation

  • Sotirios Fragkos & Baptiste Fabre & Olena Tkach & Stéphane Petit & Dominique Descamps & Gerd Schönhense & Yann Mairesse & Michael Schüler & Samuel Beaulieu, 2025. "Floquet-Bloch valleytronics," Nature Communications, Nature, vol. 16(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-61076-7
    DOI: 10.1038/s41467-025-61076-7
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