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1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs

Author

Listed:
  • Kiho Kong

    (Samsung Advanced Institute of Technology)

  • Jun Hee Choi

    (Samsung Advanced Institute of Technology)

  • Joo Hun Han

    (Samsung Advanced Institute of Technology)

  • Eunsung Lee

    (Samsung Advanced Institute of Technology)

  • Jinjoo Park

    (Samsung Advanced Institute of Technology)

  • Nakhyun Kim

    (Samsung Advanced Institute of Technology)

  • Jaewoo Lee

    (Samsung Advanced Institute of Technology)

  • Chanyoung Shin

    (Seoul National University)

  • Jung Hun Park

    (Samsung Advanced Institute of Technology)

  • Dong-Chul Shin

    (Samsung Advanced Institute of Technology)

  • Joosung Kim

    (Samsung Advanced Institute of Technology)

  • Sunil Kim

    (Samsung Advanced Institute of Technology)

  • Tae-Gon Kim

    (Samsung Advanced Institute of Technology)

  • Seokho Yun

    (Samsung Advanced Institute of Technology)

  • Miyoung Kim

    (Seoul National University)

Abstract

Highly efficient, ultrahigh-density inorganic micro-LED displays are gaining a strong position in the market for use in augmented reality glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the micro-LED displays evolve into next generation augmented reality viewers. Here, we report 1-nm-thick epitaxial AlN passivation for 1.5-μm-diameter InGaN red micro-LEDs with high external quantum efficiency of 6.5% at the peak wavelength of 649 nm. The flexible form factor of the red micro-LEDs is achieved through the development of a near-complete device transfer. By overcoming the existing bottlenecks of red spectral efficiency and form factor of inorganic micro-LEDs, we believe this will pave the way for another revolution in the augmented reality and metaverse industries.

Suggested Citation

  • Kiho Kong & Jun Hee Choi & Joo Hun Han & Eunsung Lee & Jinjoo Park & Nakhyun Kim & Jaewoo Lee & Chanyoung Shin & Jung Hun Park & Dong-Chul Shin & Joosung Kim & Sunil Kim & Tae-Gon Kim & Seokho Yun & M, 2025. "1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs," Nature Communications, Nature, vol. 16(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-60886-z
    DOI: 10.1038/s41467-025-60886-z
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    References listed on IDEAS

    as
    1. Jiho Shin & Hyunseok Kim & Suresh Sundaram & Junseok Jeong & Bo-In Park & Celesta S. Chang & Joonghoon Choi & Taemin Kim & Mayuran Saravanapavanantham & Kuangye Lu & Sungkyu Kim & Jun Min Suh & Ki Seo, 2023. "Vertical full-colour micro-LEDs via 2D materials-based layer transfer," Nature, Nature, vol. 614(7946), pages 81-87, February.
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