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A non-pyrophoric precursor for the low temperature deposition of metallic aluminium

Author

Listed:
  • Erica N. Faria

    (University College London)

  • Samuel P. Douglas

    (University College London)

  • Shreya Mrig

    (University College London)

  • Leonardo Santoni

    (University College London)

  • Adam J. Clancy

    (University College London)

  • Daniel W. N. Wilson

    (University College London)

  • Caroline E. Knapp

    (University College London)

Abstract

The development of microelectronics prompts a search for precursors that can deposit conductive features. There is scarce research on Al as it is normally deposited using pyrophoric AlH3 etherates/aminates. Ligands can impart increased stability while maintaining the ability to deposit target materials. Accordingly, we have engineered an aluminium complex that can undergo conversion to Al(0) at 100 °C. Our multi-step synthetic design features β-ketoiminate compounds, [Al(R-ketoiminate)2Cl] (R = Me, Et, iPr, Ph and Mes, 1-5) as starting materials to obtain aluminium hydride complexes: the polymeric amidoalane Li[AlH2(iPr-Hacnac)AlH3]n (6) and the imidoalane cluster [AlH2AlH2(N-Mes)3(AlH2 ּ Li(Et2O)2)2] (8). Decomposition of 8 into aluminium metal is observed when heated under vacuum at 100 °C and is confirmed by XRD, TEM, XPS. Deposition of a highly conductive film of Al is achieved from 8 after three weeks under nitrogen at room temperature. This represents a route to metallic aluminium involving non-pyrophoric precursors at low temperatures.

Suggested Citation

  • Erica N. Faria & Samuel P. Douglas & Shreya Mrig & Leonardo Santoni & Adam J. Clancy & Daniel W. N. Wilson & Caroline E. Knapp, 2025. "A non-pyrophoric precursor for the low temperature deposition of metallic aluminium," Nature Communications, Nature, vol. 16(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-60786-2
    DOI: 10.1038/s41467-025-60786-2
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