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Ultra-weak infrared light detection based on steep-slope phototransistors

Author

Listed:
  • Jiadong Mei

    (Nanjing University)

  • Junzhuan Wang

    (Nanjing University)

  • Xuetao Gan

    (Northwestern Polytechnical University)

  • Xiaomu Wang

    (Nanjing University
    Beijing Institute of Technology)

Abstract

A photodetector’s sensitivity is conventionally quantified by specific detectivity, which balances responsivity and noise. However, we reveal that the turn-on threshold power is fundamentally governed by photo-carrier injection rather than detectivity. In conventional phototransistors/diodes, incident light cannot generate photocurrent via thermionic injection until its intensity saturates the surface potential. To overcome this limit, we design a photo-tunneling transistor with a partially dual-gated black phosphorus channel. This device breaks the injection barrier, achieving a temperature-independent subthreshold swing of ~50 mV/dec up to 250 K and reducing the threshold power by over an order of magnitude. At 80 K, it detects mid-wave infrared light with a minimum power of ~35 pW, outperforming conventional phototransistors with higher detectivity by ~30-fold. Our work redefines the sensitivity criteria for photodetectors and highlights the potential of steep-slope transistors in low-power optoelectronics, offering a pathway to ultrasensitive infrared sensing and imaging technologies.

Suggested Citation

  • Jiadong Mei & Junzhuan Wang & Xuetao Gan & Xiaomu Wang, 2025. "Ultra-weak infrared light detection based on steep-slope phototransistors," Nature Communications, Nature, vol. 16(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-59006-8
    DOI: 10.1038/s41467-025-59006-8
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