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Momentum-resolved fingerprint of Mottness in layer-dimerized Nb3Br8

Author

Listed:
  • Mihir Date

    (Max Planck Institut für Mikrostrukturphysik
    Harwell Science and Innovation Campus)

  • Francesco Petocchi

    (University of Geneva)

  • Yun Yen

    (Paul Scherrer Institute
    École Polytechnique Fédérale de Lausanne (EPFL))

  • Jonas A. Krieger

    (Max Planck Institut für Mikrostrukturphysik
    PSI Center for Neutron and Muon Sciences CNM)

  • Banabir Pal

    (Max Planck Institut für Mikrostrukturphysik)

  • Vicky Hasse

    (Max Planck Institute for Chemical Physics of Solids Nöthnitzer Straße)

  • Emily C. McFarlane

    (Max Planck Institut für Mikrostrukturphysik)

  • Chris Körner

    (Martin-Luther-Universität Halle-Wittenberg)

  • Jiho Yoon

    (Max Planck Institut für Mikrostrukturphysik)

  • Matthew D. Watson

    (Harwell Science and Innovation Campus)

  • Vladimir N. Strocov

    (Paul Scherrer Institute)

  • Yuanfeng Xu

    (Zhejiang University)

  • Ilya Kostanovski

    (Max Planck Institut für Mikrostrukturphysik)

  • Mazhar N. Ali

    (Max Planck Institut für Mikrostrukturphysik
    Delft University of Technology)

  • Sailong Ju

    (Paul Scherrer Institute)

  • Nicholas C. Plumb

    (Paul Scherrer Institute)

  • Michael A. Sentef

    (University of Bremen
    Luruper Chaussee 149)

  • Georg Woltersdorf

    (Martin-Luther-Universität Halle-Wittenberg)

  • Michael Schüler

    (Paul Scherrer Institute
    University of Fribourg)

  • Philipp Werner

    (University of Fribourg)

  • Claudia Felser

    (Max Planck Institute for Chemical Physics of Solids Nöthnitzer Straße)

  • Stuart S. P. Parkin

    (Max Planck Institut für Mikrostrukturphysik)

  • Niels B. M. Schröter

    (Max Planck Institut für Mikrostrukturphysik)

Abstract

Crystalline solids can become band insulators due to fully filled bands, or Mott insulators due to strong electronic correlations. While Mott insulators can theoretically occur in systems with an even number of electrons per unit cell, distinguishing them from band insulators experimentally has remained a longstanding challenge. In this work, we present a unique momentum-resolved signature of a dimerized Mott-insulating phase in the experimental spectral function of Nb3Br8: the top of the highest occupied band along the out-of-plane direction kz has a momentum-space separation Δkz = 2π/d, whereas that of a band insulator is less than π/d, where d is the average interlayer spacing. Identifying Nb3Br8 as a Mott insulator is crucial to understand its role in the field-free Josephson diode effect. Moreover, our method could be extended to other van der Waals systems where tuning interlayer coupling and Coulomb interactions can drive a band- to Mott-insulating transition.

Suggested Citation

  • Mihir Date & Francesco Petocchi & Yun Yen & Jonas A. Krieger & Banabir Pal & Vicky Hasse & Emily C. McFarlane & Chris Körner & Jiho Yoon & Matthew D. Watson & Vladimir N. Strocov & Yuanfeng Xu & Ilya , 2025. "Momentum-resolved fingerprint of Mottness in layer-dimerized Nb3Br8," Nature Communications, Nature, vol. 16(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-58885-1
    DOI: 10.1038/s41467-025-58885-1
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    References listed on IDEAS

    as
    1. Y. D. Wang & W. L. Yao & Z. M. Xin & T. T. Han & Z. G. Wang & L. Chen & C. Cai & Yuan Li & Y. Zhang, 2020. "Band insulator to Mott insulator transition in 1T-TaS2," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
    2. C. J. Butler & M. Yoshida & T. Hanaguri & Y. Iwasa, 2020. "Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2," Nature Communications, Nature, vol. 11(1), pages 1-6, December.
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