Author
Listed:
- Zhikun Zhou
(Hefei University of Technology)
- Zihan Zhang
(Hefei University of Technology)
- Hanlin Zhang
(Hefei University of Technology)
- Xianchao Wei
(Hefei University of Technology)
- Wei He
(Hefei University of Technology
China Academy of Information and Communications Technology
Shenzhen Academy of Information and Communications Technology)
- Quhuan Shen
(Ltd)
- Xiuwen Bi
(Ltd)
- Tao Yuan
(Shenzhen University
Shenzhen University)
- Xiaochen Chen
(China Academy of Information and Communications Technology
Shenzhen Academy of Information and Communications Technology)
- Lei Sang
(Hefei University of Technology)
- Wen Huang
(Hefei University of Technology
Shenzhen University
Shenzhen University)
Abstract
A wafer-scale metal self-rolled-up membrane platform has been proposed for the design and fabrication of radio-frequency on-chip lumped passive components, which is demonstrated on a commercial 4-inch sapphire batch fabrication line. Compared to the traditional methodology including planar or SiNx based self-rolled-up membrane processing technologies to obtain the most basic passive lumped components, such as inductors and capacitors on the chip, this platform enables more compact three-dimensional construction of the component device structure with higher electrical performance. For demonstration, batches of wafer-scale RF inductors and capacitors are fabricated through precise design based on electromagnetic analysis. Measurement results show that radio-frequency inductor samples obtain inductance of 0.6 nH~3.4 nH and a maximum quality factor of 3.1 ~ 7.3 with the largest inductance density of 2.26 $$\,{{{\rm{\mu }}}}{{{\rm{H}}}}/{{{{\rm{mm}}}}}^{2}$$ μ H / mm 2 , and a typical RF capacitor sample show capacitance of 0.5 pF with the largest capacitance density of 1528.4 $${{{\rm{pF}}}}/{{{{\rm{mm}}}}}^{2}$$ pF / mm 2 . After post electroplating, coper layer thickness of a 1.1 nH inductor is increased to be ~ 2.7 μm from 120 nm with the inner diameter of 80 μm, and the maximum quality factor is significantly increased to 18 @ 1.4 GHz. Standalone inductors can be successfully cut off from a 4-inch sapphire wafer by using laser modification cutting.
Suggested Citation
Zhikun Zhou & Zihan Zhang & Hanlin Zhang & Xianchao Wei & Wei He & Quhuan Shen & Xiuwen Bi & Tao Yuan & Xiaochen Chen & Lei Sang & Wen Huang, 2025.
"Wafer-scale platform for on-chip 3D radio frequency lumped passive components using metal self-rolled-up membrane technique,"
Nature Communications, Nature, vol. 16(1), pages 1-11, December.
Handle:
RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57769-8
DOI: 10.1038/s41467-025-57769-8
Download full text from publisher
References listed on IDEAS
- Xing Li & Cuicui Cao & Chang Liu & Wenhao He & Kaibo Wu & Yang Wang & Borui Xu & Ziao Tian & Enming Song & Jizhai Cui & Gaoshan Huang & Changlin Zheng & Zengfeng Di & Xun Cao & Yongfeng Mei, 2022.
"Self-rolling of vanadium dioxide nanomembranes for enhanced multi-level solar modulation,"
Nature Communications, Nature, vol. 13(1), pages 1-10, December.
- Felix Gabler & Dmitriy D. Karnaushenko & Daniil Karnaushenko & Oliver G. Schmidt, 2019.
"Magnetic origami creates high performance micro devices,"
Nature Communications, Nature, vol. 10(1), pages 1-10, December.
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