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Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet

Author

Listed:
  • Han Wu

    (Rice University)

  • Lei Chen

    (Rice University)

  • Paul Malinowski

    (University of Washington)

  • Bo Gyu Jang

    (Los Alamos National Laboratory
    Kyung Hee University)

  • Qinwen Deng

    (University of Pennsylvania)

  • Kirsty Scott

    (Yale University
    Yale University
    University of California
    Yale University)

  • Jianwei Huang

    (Rice University)

  • Jacob P. C. Ruff

    (Cornell University)

  • Yu He

    (University of California)

  • Xiang Chen

    (University of California)

  • Chaowei Hu

    (University of Washington
    University of Washington)

  • Ziqin Yue

    (Rice University)

  • Ji Seop Oh

    (Rice University
    University of Washington)

  • Xiaokun Teng

    (Rice University)

  • Yucheng Guo

    (Rice University)

  • Mason Klemm

    (Rice University)

  • Chuqiao Shi

    (Rice University)

  • Yue Shi

    (University of Washington)

  • Chandan Setty

    (Rice University)

  • Tyler Werner

    (Yale University)

  • Makoto Hashimoto

    (SLAC National Accelerator Laboratory)

  • Donghui Lu

    (SLAC National Accelerator Laboratory)

  • Turgut Yilmaz

    (Brookhaven National Lab)

  • Elio Vescovo

    (Brookhaven National Lab)

  • Sung-Kwan Mo

    (Lawrence Berkeley National Laboratory)

  • Alexei Fedorov

    (Lawrence Berkeley National Laboratory)

  • Jonathan D. Denlinger

    (Lawrence Berkeley National Laboratory)

  • Yaofeng Xie

    (Rice University)

  • Bin Gao

    (Rice University)

  • Junichiro Kono

    (Rice University
    Rice University
    Rice University)

  • Pengcheng Dai

    (Rice University)

  • Yimo Han

    (Rice University)

  • Xiaodong Xu

    (University of Washington
    University of Washington)

  • Robert J. Birgeneau

    (University of California
    Lawrence Berkeley National Laboratory
    University of California)

  • Jian-Xin Zhu

    (Los Alamos National Laboratory)

  • Eduardo H. da Silva Neto

    (Yale University
    Yale University
    University of California
    Yale University)

  • Liang Wu

    (University of Pennsylvania)

  • Jiun-Haw Chu

    (University of Washington)

  • Qimiao Si

    (Rice University)

  • Ming Yi

    (Rice University)

Abstract

Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe5−δGeTe2. We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.

Suggested Citation

  • Han Wu & Lei Chen & Paul Malinowski & Bo Gyu Jang & Qinwen Deng & Kirsty Scott & Jianwei Huang & Jacob P. C. Ruff & Yu He & Xiang Chen & Chaowei Hu & Ziqin Yue & Ji Seop Oh & Xiaokun Teng & Yucheng Gu, 2024. "Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46862-z
    DOI: 10.1038/s41467-024-46862-z
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    References listed on IDEAS

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