Author
Listed:
- Yuxin Zhang
(The Ohio State University)
- Haidong Tian
(The Ohio State University)
- Huaixuan Li
(The University of Texas at Dallas
Carnegie Mellon University)
- Chiho Yoon
(The University of Texas at Dallas)
- Ryan A. Nelson
(The Ohio State University)
- Ziling Li
(The Ohio State University)
- Kenji Watanabe
(National Institute for Materials Science, 1-1 Namiki)
- Takashi Taniguchi
(National Institute for Materials Science, 1-1 Namiki)
- Dmitry Smirnov
(National High Magnetic Field Laboratory)
- Roland K. Kawakami
(The Ohio State University)
- Joshua E. Goldberger
(The Ohio State University)
- Fan Zhang
(The University of Texas at Dallas)
- Chun Ning Lau
(The Ohio State University)
Abstract
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.
Suggested Citation
Yuxin Zhang & Haidong Tian & Huaixuan Li & Chiho Yoon & Ryan A. Nelson & Ziling Li & Kenji Watanabe & Takashi Taniguchi & Dmitry Smirnov & Roland K. Kawakami & Joshua E. Goldberger & Fan Zhang & Chun , 2024.
"Quantum octets in high mobility pentagonal two-dimensional PdSe2,"
Nature Communications, Nature, vol. 15(1), pages 1-7, December.
Handle:
RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-44972-2
DOI: 10.1038/s41467-024-44972-2
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