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Process integration and future outlook of 2D transistors

Author

Listed:
  • Kevin P. O’Brien

    (Components Research)

  • Carl H. Naylor

    (Components Research)

  • Chelsey Dorow

    (Components Research)

  • Kirby Maxey

    (Components Research)

  • Ashish Verma Penumatcha

    (Components Research)

  • Andrey Vyatskikh

    (Components Research)

  • Ting Zhong

    (Components Research)

  • Ande Kitamura

    (Components Research)

  • Sudarat Lee

    (Components Research)

  • Carly Rogan

    (Components Research)

  • Wouter Mortelmans

    (Components Research)

  • Mahmut Sami Kavrik

    (Components Research)

  • Rachel Steinhardt

    (Components Research)

  • Pratyush Buragohain

    (Components Research)

  • Sourav Dutta

    (Components Research)

  • Tristan Tronic

    (Components Research)

  • Scott Clendenning

    (Components Research)

  • Paul Fischer

    (Components Research)

  • Ernisse S. Putna

    (Components Research)

  • Marko Radosavljevic

    (Components Research)

  • Matt Metz

    (Components Research)

  • Uygar Avci

    (Components Research)

Abstract

The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent progress in the fabrication of complementary metal-oxide-semiconductor (CMOS) devices based on stacked 2D TMD nanoribbons and specifically highlight issues that still need to be resolved by the 2D community in five crucial research areas: contacts, channel growth, gate oxide, variability, and doping. While 2D TMD transistors have great potential, more research is needed to understand the physical interactions of 2D materials at the atomic scale.

Suggested Citation

  • Kevin P. O’Brien & Carl H. Naylor & Chelsey Dorow & Kirby Maxey & Ashish Verma Penumatcha & Andrey Vyatskikh & Ting Zhong & Ande Kitamura & Sudarat Lee & Carly Rogan & Wouter Mortelmans & Mahmut Sami , 2023. "Process integration and future outlook of 2D transistors," Nature Communications, Nature, vol. 14(1), pages 1-5, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-41779-5
    DOI: 10.1038/s41467-023-41779-5
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