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Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons

Author

Listed:
  • Yu-Hui Chen

    (Beijing Institute of Technology)

  • Ronnie R. Tamming

    (Dodd-Walls Centre for Photonic and Quantum Technologies
    MacDiarmid Institute for Advanced Materials and Nanotechnology
    Victoria University of Wellington)

  • Kai Chen

    (Dodd-Walls Centre for Photonic and Quantum Technologies
    MacDiarmid Institute for Advanced Materials and Nanotechnology
    Victoria University of Wellington)

  • Zhepeng Zhang

    (Peking University)

  • Fengjiang Liu

    (Westlake University
    Westlake Institute for Advanced Study)

  • Yanfeng Zhang

    (Peking University)

  • Justin M. Hodgkiss

    (Dodd-Walls Centre for Photonic and Quantum Technologies
    MacDiarmid Institute for Advanced Materials and Nanotechnology
    Victoria University of Wellington)

  • Richard J. Blaikie

    (Dodd-Walls Centre for Photonic and Quantum Technologies
    MacDiarmid Institute for Advanced Materials and Nanotechnology
    University of Otago)

  • Boyang Ding

    (Dodd-Walls Centre for Photonic and Quantum Technologies
    MacDiarmid Institute for Advanced Materials and Nanotechnology
    University of Otago)

  • Min Qiu

    (Westlake University
    Westlake Institute for Advanced Study)

Abstract

Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate a widely tunable bandgap (renormalisation up to 550 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently doping the lattice with plasmonic hot electrons. In particular, we integrate tungsten-disulfide (WS2) monolayers into a self-assembled plasmonic crystal, which enables coherent coupling between semiconductor excitons and plasmon resonances. Accompanying this process, the plasmon-induced hot electrons can repeatedly fill the WS2 conduction band, leading to population inversion and a significant reconstruction in band structures and exciton relaxations. Our findings provide an effective measure to engineer optical responses of 2D semiconductors, allowing flexibilities in design and optimisation of photonic and optoelectronic devices.

Suggested Citation

  • Yu-Hui Chen & Ronnie R. Tamming & Kai Chen & Zhepeng Zhang & Fengjiang Liu & Yanfeng Zhang & Justin M. Hodgkiss & Richard J. Blaikie & Boyang Ding & Min Qiu, 2021. "Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-24667-8
    DOI: 10.1038/s41467-021-24667-8
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    References listed on IDEAS

    as
    1. Haitao Liu & Philippe Lalanne, 2008. "Microscopic theory of the extraordinary optical transmission," Nature, Nature, vol. 452(7188), pages 728-731, April.
    2. T. W. Ebbesen & H. J. Lezec & H. F. Ghaemi & T. Thio & P. A. Wolff, 1998. "Extraordinary optical transmission through sub-wavelength hole arrays," Nature, Nature, vol. 391(6668), pages 667-669, February.
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