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Improving organic photovoltaic cells by forcing electrode work function well beyond onset of Ohmic transition

Author

Listed:
  • Chao Zhao

    (National University of Singapore
    Xi’an Jiaotong University)

  • Cindy G. Tang

    (National University of Singapore)

  • Zong-Long Seah

    (National University of Singapore)

  • Qi-Mian Koh

    (National University of Singapore)

  • Lay-Lay Chua

    (National University of Singapore
    National University of Singapore)

  • Rui-Qi Png

    (National University of Singapore)

  • Peter K. H. Ho

    (National University of Singapore)

Abstract

As electrode work function rises or falls sufficiently, the organic semiconductor/electrode contact reaches Fermi-level pinning, and then, few tenths of an electron-volt later, Ohmic transition. For organic solar cells, the resultant flattening of open-circuit voltage (Voc) and fill factor (FF) leads to a ‘plateau’ that maximizes power conversion efficiency (PCE). Here, we demonstrate this plateau in fact tilts slightly upwards. Thus, further driving of the electrode work function can continue to improve Voc and FF, albeit slowly. The first effect arises from the coercion of Fermi level up the semiconductor density-of-states in the case of ‘soft’ Fermi pinning, raising cell built-in potential. The second effect arises from the contact-induced enhancement of majority-carrier mobility. We exemplify these using PBDTTPD:PCBM solar cells, where PBDTTPD is a prototypal face-stacked semiconductor, and where work function of the hole collection layer is systematically ‘tuned’ from onset of Fermi-level pinning, through Ohmic transition, and well into the Ohmic regime.

Suggested Citation

  • Chao Zhao & Cindy G. Tang & Zong-Long Seah & Qi-Mian Koh & Lay-Lay Chua & Rui-Qi Png & Peter K. H. Ho, 2021. "Improving organic photovoltaic cells by forcing electrode work function well beyond onset of Ohmic transition," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-22358-y
    DOI: 10.1038/s41467-021-22358-y
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