Author
Listed:
- Chenchao Xie
(National University of Singapore
National University of Singapore)
- Xiaofei Zhao
(National University of Singapore)
- Evon Woan Yuann Ong
(National University of Singapore
National University of Singapore)
- Zhi-Kuang Tan
(National University of Singapore
National University of Singapore)
Abstract
Mobile and wearable devices are increasingly reliant on near-infrared (NIR) covert illumination for facial recognition, eye-tracking or motion and depth sensing functions. However, these small devices offer limited spatial real estate that is typically already occupied by their full-area electronic color displays. Here, we report a transparent perovskite light-emitting diode (LED) that could be overlaid across a color display to provide an efficient and high-intensity NIR illumination. Our transparent devices are constructed with an ITO/AZO/PEIE/FAPbI3/poly-TPD/MoO3/Al/ITO/Ag/ITO architecture, and offer a high average transmittance of more than 55% across the visible spectral region. In particular, our Al/ITO/Ag/ITO top transparent electrode was designed to offer a combination low sheet resistance and low plasma damage upon electrode deposition. The devices emit at 799 nm with a high total external quantum efficiency of 5.7% at a current density of 5.3 mA cm−2 and a high radiance of 1.5 W sr−1 m−2, and possess a large functional device area of 120 mm2. The efficient performance is ideal for battery-powered wearable devices, and could enable advanced security and sensing features on future smart-watches, phones, gaming consoles and augmented or virtual reality headsets.
Suggested Citation
Chenchao Xie & Xiaofei Zhao & Evon Woan Yuann Ong & Zhi-Kuang Tan, 2020.
"Transparent near-infrared perovskite light-emitting diodes,"
Nature Communications, Nature, vol. 11(1), pages 1-5, December.
Handle:
RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18110-7
DOI: 10.1038/s41467-020-18110-7
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