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Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Author

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  • Xiuyan Li

    (Shanghai Jiao Tong University
    The University of Tokyo)

  • Akira Toriumi

    (The University of Tokyo)

Abstract

Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. In this work, stepwise internal potential jumps in a metal/FE/metal/PE/metal system observed near the coercive voltage of the FE layer are reported through carefully designed DC measurements. The relationship of the internal potential jumps with the steep SS in FETs is also experimentally confirmed by connecting a FE capacitor to a simple metal-oxide-semiconductor FET. On the basis of the experimental results, the observed internal potential jumps are analytically modelled from the viewpoint of bound charge emission associated with each domain flip in a multiple-domain FE layer in a FE/PE stack. This view is different from the original NC concept and should be employed for characterizing FE/PE gate stack FETs.

Suggested Citation

  • Xiuyan Li & Akira Toriumi, 2020. "Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-15753-4
    DOI: 10.1038/s41467-020-15753-4
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