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High efficiency and stability of ink-jet printed quantum dot light emitting diodes

Author

Listed:
  • Chaoyu Xiang

    (TCL Research
    Chinese Academy of Science)

  • Longjia Wu

    (TCL Research)

  • Zizhe Lu

    (TCL Research)

  • Menglin Li

    (City University of Hong Kong
    City University of Hong Kong)

  • Yanwei Wen

    (Huazhong University of Science and Technology)

  • Yixing Yang

    (TCL Research)

  • Wenyong Liu

    (TCL Research)

  • Ting Zhang

    (TCL Research)

  • Weiran Cao

    (TCL Research)

  • Sai-Wing Tsang

    (City University of Hong Kong
    City University of Hong Kong)

  • Bin Shan

    (Huazhong University of Science and Technology)

  • Xiaolin Yan

    (TCL Research)

  • Lei Qian

    (TCL Research
    Chinese Academy of Science)

Abstract

The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

Suggested Citation

  • Chaoyu Xiang & Longjia Wu & Zizhe Lu & Menglin Li & Yanwei Wen & Yixing Yang & Wenyong Liu & Ting Zhang & Weiran Cao & Sai-Wing Tsang & Bin Shan & Xiaolin Yan & Lei Qian, 2020. "High efficiency and stability of ink-jet printed quantum dot light emitting diodes," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-15481-9
    DOI: 10.1038/s41467-020-15481-9
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