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Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures

Author

Listed:
  • Aymen Yangui

    (University of Tokyo
    LIMMS/CNRS-IIS, UMI 2820)

  • Marc Bescond

    (University of Tokyo
    LIMMS/CNRS-IIS, UMI 2820)

  • Tifei Yan

    (University of Tokyo)

  • Naomi Nagai

    (University of Tokyo)

  • Kazuhiko Hirakawa

    (University of Tokyo
    LIMMS/CNRS-IIS, UMI 2820
    University of Tokyo)

Abstract

Rapid progress in high-speed, densely packed electronic/photonic devices has brought unprecedented benefits to our society. However, this technology trend has in reverse led to a tremendous increase in heat dissipation, which degrades device performance and lifetimes. The scientific and technological challenge henceforth lies in efficient cooling of such high-performance devices. Here, we report on evaporative electron cooling in asymmetric Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) double barrier heterostructures. Electron temperature, Te, in the quantum well (QW) and that in the electrodes are determined from photoluminescence measurements. At 300 K, Te in the QW is gradually decreased down to 250 K as the bias voltage is increased up to the maximum resonant tunneling condition, whereas Te in the electrode remains unchanged. This behavior is explained in term of the evaporative cooling process and is quantitatively described by the quantum transport theory.

Suggested Citation

  • Aymen Yangui & Marc Bescond & Tifei Yan & Naomi Nagai & Kazuhiko Hirakawa, 2019. "Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures," Nature Communications, Nature, vol. 10(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-12488-9
    DOI: 10.1038/s41467-019-12488-9
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