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Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation

Author

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  • Moriyoshi Haruyama

    (Gunma University
    National Institutes for Quantum and Radiological Science and Technology)

  • Shinobu Onoda

    (National Institutes for Quantum and Radiological Science and Technology
    National Institutes for Quantum and Radiological Science and Technology)

  • Taisei Higuchi

    (Gunma University
    National Institutes for Quantum and Radiological Science and Technology)

  • Wataru Kada

    (Gunma University)

  • Atsuya Chiba

    (National Institutes for Quantum and Radiological Science and Technology)

  • Yoshimi Hirano

    (National Institutes for Quantum and Radiological Science and Technology)

  • Tokuyuki Teraji

    (National Institute for Materials Science)

  • Ryuji Igarashi

    (National Institutes for Quantum and Radiological Science and Technology
    National Institutes for Quantum and Radiological Science and Technology)

  • Sora Kawai

    (Waseda University)

  • Hiroshi Kawarada

    (Waseda University)

  • Yu Ishii

    (National Institutes for Quantum and Radiological Science and Technology
    Waseda University)

  • Ryosuke Fukuda

    (National Institutes for Quantum and Radiological Science and Technology
    Waseda University)

  • Takashi Tanii

    (Waseda University)

  • Junichi Isoya

    (University of Tsukuba)

  • Takeshi Ohshima

    (National Institutes for Quantum and Radiological Science and Technology
    National Institutes for Quantum and Radiological Science and Technology)

  • Osamu Hanaizumi

    (Gunma University)

Abstract

Quantum information processing requires quantum registers based on coherently interacting quantum bits. The dipolar couplings between nitrogen vacancy (NV) centres with nanometre separation makes them a potential platform for room-temperature quantum registers. The fabrication of quantum registers that consist of NV centre arrays has not advanced beyond NV pairs for several years. Further scaling up of coupled NV centres by using nitrogen implantation through nanoholes has been hampered because the shortening of the separation distance is limited by the nanohole size and ion straggling. Here, we demonstrate the implantation of C5N4Hn from an adenine ion source to achieve further scaling. Because the C5N4Hn ion may be regarded as an ideal point source, the separation distance is solely determined by straggling. We successfully demonstrate the fabrication of strongly coupled triple NV centres. Our method may be extended to fabricate small quantum registers that can perform quantum information processing at room temperature.

Suggested Citation

  • Moriyoshi Haruyama & Shinobu Onoda & Taisei Higuchi & Wataru Kada & Atsuya Chiba & Yoshimi Hirano & Tokuyuki Teraji & Ryuji Igarashi & Sora Kawai & Hiroshi Kawarada & Yu Ishii & Ryosuke Fukuda & Takas, 2019. "Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation," Nature Communications, Nature, vol. 10(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10529-x
    DOI: 10.1038/s41467-019-10529-x
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