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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Author

Listed:
  • Roland Nagy

    (University of Stuttgart and Institute for Quantum Science and Technology IQST)

  • Matthias Niethammer

    (University of Stuttgart and Institute for Quantum Science and Technology IQST)

  • Matthias Widmann

    (University of Stuttgart and Institute for Quantum Science and Technology IQST)

  • Yu-Chen Chen

    (University of Stuttgart and Institute for Quantum Science and Technology IQST)

  • Péter Udvarhelyi

    (Hungarian Academy of Sciences
    Eötvös Loránd University)

  • Cristian Bonato

    (SUPA, Heriot-Watt University)

  • Jawad Ul Hassan

    (Chemistry and Biology, Linköping University)

  • Robin Karhu

    (Chemistry and Biology, Linköping University)

  • Ivan G. Ivanov

    (Chemistry and Biology, Linköping University)

  • Nguyen Tien Son

    (Chemistry and Biology, Linköping University)

  • Jeronimo R. Maze

    (Pontificia Universidad Católica de Chile
    Pontificia Universidad Católica de Chile)

  • Takeshi Ohshima

    (National Institutes for Quantum and Radiological Science and Technology)

  • Öney O. Soykal

    (Naval Research Laboratory)

  • Ádám Gali

    (Hungarian Academy of Sciences
    Budapest University of Technology and Economics)

  • Sang-Yun Lee

    (Korea Institute of Science and Technology)

  • Florian Kaiser

    (University of Stuttgart and Institute for Quantum Science and Technology IQST)

  • Jörg Wrachtrup

    (University of Stuttgart and Institute for Quantum Science and Technology IQST)

Abstract

Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4A2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.

Suggested Citation

  • Roland Nagy & Matthias Niethammer & Matthias Widmann & Yu-Chen Chen & Péter Udvarhelyi & Cristian Bonato & Jawad Ul Hassan & Robin Karhu & Ivan G. Ivanov & Nguyen Tien Son & Jeronimo R. Maze & Takeshi, 2019. "High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-09873-9
    DOI: 10.1038/s41467-019-09873-9
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