IDEAS home Printed from https://ideas.repec.org/a/gam/jsusta/v16y2024i9p3819-d1387623.html
   My bibliography  Save this article

Synthesis of Wrinkled MoS 2 Thin Films Using a Two-Step Method Consisting of Magnetron Sputtering and Sulfurization in a Confined Space

Author

Listed:
  • Claudia Mihai

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
    These authors contributed equally to this work.)

  • Iosif-Daniel Simandan

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
    These authors contributed equally to this work.)

  • Florinel Sava

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania)

  • Angel-Theodor Buruiana

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania)

  • Amelia Elena Bocirnea

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania)

  • Teddy Tite

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania)

  • Mohamed Yassine Zaki

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania)

  • Alin Velea

    (National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania)

Abstract

Considering the increasing need for sustainable and economical energy storage solutions, the integration of layered materials such as MoS 2 into these systems represents an important step toward enhancing energy sustainability and efficiency. Exploring environmentally responsible fabrication techniques, this study assesses wrinkled MoS 2 thin films synthesized from distinct Mo and MoS 2 targets, followed by sulfurization conducted in a graphite box. We utilized magnetron sputtering to deposit precursor Mo and MoS 2 films on Si substrates, achieving thicknesses below 20 nm. This novel approach decreases sulfur by up to tenfold during sulfurization due to the confined space technique, contributing also to avoiding the formation of toxic gases such as SO 2 or the necessity of using H 2 S, aligning with sustainable materials development. Thinner MoS 2 layers were obtained post-sulfurization from the MoS 2 precursors, as shown by X-ray reflectometry. Raman spectroscopy and grazing X-ray diffraction analyses confirmed the amorphous nature of the as-deposited films. Post-sulfurization, both types of films exhibited crystalline hexagonal MoS 2 phases, with the sulfurized Mo showing a polycrystalline nature with a (100) orientation and sulfurized MoS 2 displaying a (00L) preferred orientation. The X-ray photoelectron spectroscopy results supported a Mo:S ratio of 1:2 on the surface of the films obtained using the MoS 2 precursor films, confirming the stoichiometry obtained by means of energy dispersive X-ray spectroscopy. Scanning electron microscopy and atomic force microscopy images revealed micrometer-sized clusters potentially formed during rapid cooling post-sulfurization, with an increased average roughness. These results open the way for the further exploration of wrinkled MoS 2 thin films in advanced energy storage technologies.

Suggested Citation

  • Claudia Mihai & Iosif-Daniel Simandan & Florinel Sava & Angel-Theodor Buruiana & Amelia Elena Bocirnea & Teddy Tite & Mohamed Yassine Zaki & Alin Velea, 2024. "Synthesis of Wrinkled MoS 2 Thin Films Using a Two-Step Method Consisting of Magnetron Sputtering and Sulfurization in a Confined Space," Sustainability, MDPI, vol. 16(9), pages 1-12, May.
  • Handle: RePEc:gam:jsusta:v:16:y:2024:i:9:p:3819-:d:1387623
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/2071-1050/16/9/3819/pdf
    Download Restriction: no

    File URL: https://www.mdpi.com/2071-1050/16/9/3819/
    Download Restriction: no
    ---><---

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jsusta:v:16:y:2024:i:9:p:3819-:d:1387623. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.