Effect of Adding Cu 2 O as a Back Surface Field Layer on the Performance of Copper Manganese Tin Sulfide Solar Cells

One of the major limitations causing deadlock in solar cells with higher sulfur content in the photovoltaic absorber material is the unintended formation of an uncontrollable MoS 2 layer between the absorber material and Mo back contact, which can affect negatively the efficiency of solar cells. Researchers reported that it is very difficult to control the MoS 2 properties such as the conductivity type, thickness, band gap, and carrier concentration in experiments. Considering these challenges, an initial step involved a thorough examination utilizing the one-dimensional solar cell capacitance simulator (SCAPS-1D) to assess the impact of n-MoS 2 interlayer thickness and donor concentration on the performance of CMTS solar cells. Our investigation revealed the formation of a “cliff-like CBO” at the CMTS/n-MoS 2 interface, facilitating the transport of electrons from the p-CMTS absorber to the Mo back contact, resulting in a significantly higher recombination rate. Subsequently, herein a novel approach is proposed, using Cu 2 O as a back surface field (BSF) layer due to its low cost, intrinsic p-type properties, and non-toxic nature. Simulation results of a novel heterostructure (Mo/Cu 2 O/CMTS/CdS/i-ZnO/AZO/Al) of the CMTS-based solar cell are discussed in terms of recombination rate and conduction band alignment at the absorber/BSF interface. A desired “spike-like CBO” is formed between CMTS/Cu 2 O, which hinders the transport of electrons to the back contact. By optimizing the physical parameters such as thickness and the doping density of the Cu 2 O layer, an efficiency η of 21.78% is achieved, with an open circuit voltage ( V oc) of 1.26 V, short-circuit current density ( J sc) of 24.45 mA/cm², and fill factor ( FF ) of 70.85%. Our simulation results offer a promising research direction to further develop highly efficient and low-cost CMTS solar cells.