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Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Author

Listed:
  • Tsunenobu Kimoto

    (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan)

  • Kyosuke Yamada

    (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan)

  • Hiroki Niwa

    (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan)

  • Jun Suda

    (Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan)

Abstract

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

Suggested Citation

  • Tsunenobu Kimoto & Kyosuke Yamada & Hiroki Niwa & Jun Suda, 2016. "Promise and Challenges of High-Voltage SiC Bipolar Power Devices," Energies, MDPI, vol. 9(11), pages 1-15, November.
    • Handle: RePEc:gam:jeners:v:9:y:2016:i:11:p:908-:d:82018
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    Cited by:

    1. Alberto Castellazzi & Emre Gurpinar & Zhenyu Wang & Abdallah Suliman Hussein & Pablo Garcia Fernandez, 2019. "Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage," Energies, MDPI, vol. 12(23), pages 1-14, November.

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