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Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode

Author

Listed:
  • Wanqiang Fu

    (Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China)

  • Qizhen Chen

    (Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China)

  • Peng Gao

    (CAS Key Laboratory of Design a Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China)

  • Linqin Jiang

    (Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China)

  • Yu Qiu

    (Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China)

  • Dong-Sing Wuu

    (Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan)

  • Ray-Hua Horng

    (Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan)

  • Shui-Yang Lien

    (Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
    Department of Materials Science and Engineering, Da-Yeh University, Dacun 51591, Taiwan)

Abstract

The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (V th ) of 0.16 V, a subthreshold swing ( SS ) of 0.20 V/decade, and an on/off current ratio (I on /I off ) of 4.90 × 10 5 . Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering.

Suggested Citation

  • Wanqiang Fu & Qizhen Chen & Peng Gao & Linqin Jiang & Yu Qiu & Dong-Sing Wuu & Ray-Hua Horng & Shui-Yang Lien, 2025. "Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode," Energies, MDPI, vol. 18(9), pages 1-11, May.
    • Handle: RePEc:gam:jeners:v:18:y:2025:i:9:p:2331-:d:1648462
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