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GaN Power Transistors in Converter Design Techniques

Author

Listed:
  • Piotr J. Chrzan

    (Faculty of Electrical and Control Engineering, Gdańsk University of Technology, 80-233 Gdańsk, Poland)

  • Pawel B. Derkacz

    (Arex—(WB Group), Hutnicza 3, 81-212 Gdynia, Poland)

Abstract

The expected outstanding performance of GaN-based transistors in power applications, characterized by high switching frequency, efficiency, and compactness, requires that the design rules of converter layout optimization, filtering, and shielding need to be reexamined. Addressing the above topics, this paper reviews commercial GaN power transistors and specifies their integration techniques, including printed circuit board (PCB) embedded solutions. Then, referring to the optimization results of a half-bridge inverter leg, design techniques are presented that reduce the harmful effect of inductive and capacitive internal converter couplings, thus mitigating the electromagnetic interference (EMI) conducted emissions.

Suggested Citation

  • Piotr J. Chrzan & Pawel B. Derkacz, 2025. "GaN Power Transistors in Converter Design Techniques," Energies, MDPI, vol. 18(11), pages 1-16, May.
    • Handle: RePEc:gam:jeners:v:18:y:2025:i:11:p:2890-:d:1668938
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