Growth and Characterization of p-Type and n-Type Sb 2 Se 3 for Use in Thin-Film Photovoltaic Solar Cell Devices

In this study, a two-electrode electrodeposition technique was employed to grow thin films of antimony selenide (Sb 2 Se 3 ) on glass/fluorine-doped tin oxide (FTO) substrates. The highest quality thin films were consistently obtained within the range of 1600 mV to 1950 mV. Subsequent electrodeposition experiments were conducted at discrete voltages to produce various layers of thin films. Photoelectrochemical cell (PEC) measurements were performed to characterize the semiconductor material layers, leading to the identification of both p-Type and n-Type conductivity types. Optical absorption spectroscopic analysis revealed energy bandgap values ranging from 1.10 eV to 1.90 eV for AD-deposited Sb 2 Se 3 samples and 1.08 eV to 1.68 eV for heat-treated Sb 2 Se 3 samples, confirming the semiconducting nature of the Sb 2 Se 3 material. Additionally, other characterization techniques, including X-ray diffraction analysis, reveal that the AD-deposited layers are almost amorphous, and heat treatment shows that the material is within the orthorhombic crystalline system. Heat-treated layers grown at ~1740 mV showed highly crystalline material with a bandgap nearing the bulk bandgap of Sb 2 Se 3 . Raman spectroscopy identified vibrational modes specific to the Sb 2 Se 3 phase, further confirming its crystallinity. To explore the thin-film morphology, Scanning Electron Microscopy (SEM) was employed, revealing uniformly deposited material composed of grains of varying sizes at different voltages. Energy Dispersive X-ray analysis (EDX) confirmed the presence of antimony and selenium in the material layers.